题目：CMOS Terahertz Electronics: How to Manipulate EM-field On-chip by Meta-device 

时间：2015年12月24日16：30-17:30

地点：行政楼108

报告人：Prof. Hao YU

Biography:Dr. Hao Yu obtained Ph. D degree from electrical engineering department at UCLA in 2007. Since 2010, he has been an assistant professor at school of electrical and electronic engineering and area directors at VIRTUS (IC design) and Valens (biomedical) centre of excellence, Nanyang Technological University (NTU), Singapore. His primary research interest is in CMOS emerging technology (3D-IC, THz electronics) for energy-efficient links and sensors with more than 4M research funding from agency and industry. He has ~150 peer-reviewed IEEE/ACM publications, 4 books, 1 best paper award of ACM Transaction, 2 keynote talks, 3 best paper award nominations, 3 student paper competition (advisor) finalists, 1 inventor award from semiconductor research cooperation (SRC), and 10 pending patents. He is associate editor and technical program committee member of many IEEE/ACM international journals and conferences. He is a senior member of IEEE and member of ACM.

Abstract:Future big-data oriented commuting requires energy efficient I/O links for data migration. Silicon photonic interconnect has great performance for each individual optical component under different process technology but has limited performance after integration. This talk will address this challenge by exploring electrical interconnect solution at Terahertz with source, transmission and detector all realized in CMOS. However, the big problem here is the poor output power of source and huge crosstalk of transmission at Terahertz in CMOS.  We show that with the use of meta-device (meta-material, meta-surface, spoof surface-plasmon-polariton), one can effectively manipulate the EM-field such that in-phase power combing can be utilized to combine output power (3-5dBm) of coupled oscillators; and surface-plasmonic wave can be utilized for low-crosstalk (-21dB) on-chip transmission. Demonstrated chips with measurements at 140GHz and 280GHz by standard 65nm CMOS process. What is more, the utilization of meta-device for imaging and sensing at THz in CMOS will also be briefly reported.